1998. 6. 15 1/2 semiconductor technical data KTA1661 epitaxial planar pnp transistor revision no : 2 high current application. features high voltage : v ceo =-120v. high transition frequency : f t =120mhz(typ.). 1w(monunted on ceramic substrate). small flat package. complementary to ktc4373. maximum rating (ta=25 1 ) dim a b d e g h k 4.70 max 2.50 0.20 1.70 max 0.45+0.15/-0.10 4.25 max 1.50 0.10 0.40 typ 1.75 max 0.75 min 0.5+0.10/-0.05 sot-89 c j g d 123 2. collector (heat sink) a c k j f millimeters h 1. base 3. emitter b e ff d + _ + _ electrical characteristics (ta=25 1 ) note : h fe classification o:80 160, y:120 240 p c * : KTA1661 mounted on ceramic substrate (250mm 2 x0.8t) d type name h rank fe lot no. marking characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-120v, i e =0 - - -100 na emitter cut-off current i ebo v eb =5v, i c =0 - - -100 na collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -120 - - v emitter-base breakdown voltage v (br)ebo i e =-1ma, i c =0 -5.0 - - v dc current gain h fe (note) v ce =-5v, i c =-100ma 80 - 240 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -1.0 v base-emitter voltage v be v ce =-5v, i c =-500ma - - -1.0 v transition frequency f t v ce =-5v, i c =-100ma - 120 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - - 30 pf characteristic symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current i c -800 ma base current i b -160 ma collector power dissipation p c 500 mw p c * 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1
1998. 6. 15 2/2 KTA1661 revision no : 2 i - v cce ce collector-emitter voltage v (v) c collector current i (ma) dc current gain h fe collector current i (ma) c c fe h - i collector-emitter saturation ce(sat) collector current i (ma) c c ce(sat) v - i safe operating area ce collector-emitter voltage v (v) c collector current i (ma) i - v cbe be base-emitter voltage v (v) c collector current i (ma) voltage v (v) collector power dissipation p (w) c 0.2 20 0 ambient temperature ta ( c) pc - ta 40 60 80 100 120 140 160 0 0.4 0.6 0.8 1.0 1.2 1 mounted on ceramic substrate(250mm x0.8t) 2 ta=25 c 2 1 2 ta=100 c ta=25 c ta=-25 c 0 -4 0 -8 -12 -16 -20 -200 -400 -600 -800 common emitter ta=25 c i =-1ma b -2ma -3ma -4ma -5ma -7ma -10ma 0ma -3 -0.02 -10 -30 -100 -300 -1k -0.05 -0.1 -0.3 -0.5 common emitter i /i =10 b c ta =100 c ta=- 25 c ta=2 5 c 0 -0.2 -0.2 0 -0.4 -0.6 -0.8 -1.0 -1.2 -0.4 -0.6 -0.8 -1.0 common emitter v =-5v ce common emitter v =-5v ce ta=1 00 c ta=25 c t a= -25 c -1 -0.3 -1 -3 -10 -30 -100 -300 -3 -10 -30 -100 -300 -1k -3k single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature i max(pulse) i max (continuous) c c 1ms 10ms 100 ms dc op er at i o n 10 -30 -10 -3 -100 -300 -1k 30 50 100 300 500 1k
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